SIMULATION AND ANALYSIS OF GaAs/AlGaAs MULTIPLE QUANTUM WELL ELECTRO-ABSORPTION MODULATOR

Abstract

With an increase in internet traffic, both long distance fiber networks and short reach interconnections in data centres demand large-capacity optical transceivers. To achieve the proper transmission distances, symbol rates, and modulation for mats in optical transceivers, directly modulated lasers, Electro-Absorption Modu lators(EAM), and Mach-Zender Modulators(MZM) are, respectively needed. Because it offers a small footprint, high bandwidth, and low power consumption, the EAM is a crucial component for data centre applications.The Multiple Quantum Well(MQW) based structures has applications in optical modulators and switches. How to make optical transceivers with EAMs smaller and less expensive is a crucial concern. This work focuses on the simulation of GaAs/AlGaAs MQW EAM and analysis of absorption spectrum with and without the electric field by taking into consider ation the different well width of the quantum well. The different mole fractions of AlxGa1−xAs and variation in the number of quantum wells is also taken into consider ation for this analysis. Increasing the number of QW shows an increase in absorption coefficients. The operating wavelength is found to be 874.803nm, the wavelength at which the zero field absorption is of a minimum value but applying field causes a higher absorption value. The combination which has less insertion loss is also anal ysed. Index Terms—Electro-Absorption Modulator, External Modulation, Tunneling, Ab sorption.